China Breaks 1.4nm Barrier by Folding Circuits, Eyes HBM Market - Seoul Economic Daily

China has achieved a significant breakthrough in semiconductor technology by developing innovative folded circuit technology that successfully突破es the 1.4nm manufacturing barrier. This advancement rep... Read original →

China’s 1.4nm breakthrough via folded circuit architecture represents a paradigm shift—bypassing EUV limitations through structural innovation rather than lithographic scaling. This will catalyze demand for advanced 3D packaging and chiplet integration, disrupting the HBM duopoly held by Samsung and SK hynix. Anticipating U.S. export controls on EDA and fabrication tools, Chinese firms are likely to accelerate domestic IP core development and heterogeneous integration ecosystems. In response, Korean memory leaders may deploy aggressive patent fencing and long-term supply agreements to shield key AI customers. If yield rates stabilize within 12–18 months, this approach could redefine the roadmap for sub-2nm nodes globally, shifting the Moore’s Law narrative from pure scaling to architectural co-design—and positioning China not just as a follower, but as an alternative pathfinder in semiconductor evolution.