Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon - 01net

Atomera's technological breakthrough paves the way for broader adoption of gallium nitride-on-silicon (GaN-on-Si) radio frequency technology. This advancement represents a significant milestone for th... Read original →

Atomera’s GaN-on-Si breakthrough isn’t incremental—it’s a materials-level intervention that directly tackles yield and cost barriers in RF power amplifiers. By leveraging its MST technology to suppress dislocation density, Atomera enables economically viable 8-inch wafer production, disrupting the traditional GaN-on-SiC cost paradigm. This pressures incumbents like Qorvo and Infineon to accelerate integration or risk losing share in 5G infrastructure. Geopolitically, U.S. CHIPS Act incentives for wide-bandgap semiconductors will intensify competition with China’s aggressive GaN investments (e.g., Sanan Optoelectronics), potentially triggering new export controls. Within 18 months, macro base stations and EV fast chargers will absorb initial volume, but if cost curves steepen, consumer RF front-end modules could see structural displacement by late 2027.