Advancing towards the 0.2nm process - 36Kr

As the semiconductor industry enters the angstrom era, traditional silicon-based transistor scaling is encountering physical limits. This paper investigates the potential and challenges of complementa... Read original →

The move toward the 0.2nm node marks the semiconductor industry's entry into the extreme scaling era, where traditional silicon-based GAA technology faces physical limitations such as quantum tunneling and contact resistance. While 2D materials offer superior electrostatic control and subthreshold swing, their integration complexity and parasitic effects hinder practical performance gains. Breakthroughs will require cross-domain optimization across contact structures, carrier mobility, and parasitic parameters, alongside new CFET architectures tailored for 2D materials. Silicon-based technologies remain dominant, with 2D materials likely to be adopted only after silicon scaling reaches its limit. Supply chain players are expected to intensify IP investments in 2D materials to mitigate future technological risks. In the market, leading foundries like TSMC and Samsung may pursue R&D collaborations or M&A strategies to secure competitive advantages. Short-term competition will center on PPA evaluation models, while long-term shifts may reshape the entire semiconductor ecosystem.