A conversation about AI, energy and semiconductor innovation with Sundeep Bajikar, Applied Materials - Euractiv

The dialogue between Applied Materials executive Sundeep Bajikar and industry experts highlights critical intersections between AI, energy, and semiconductor innovation. This conversation reflects the... Read original →

The AI compute arms race is forcing semiconductor manufacturing beyond transistor density toward a triad of energy efficiency, novel materials, and architectural co-optimization. Applied Materials’ emphasis on materials science reflects a pragmatic response to post-EUV bottlenecks: at sub-3nm nodes, silicon’s physical limits necessitate cobalt, ruthenium interconnects, and high-k dielectrics to sustain Moore’s Law. This shifts power upstream—boosting bargaining leverage for sputtering target and precursor suppliers—and reorients foundry capex toward material-compatible processes. Under the EU’s Net-Zero Industry Act and U.S. IRA, fab energy intensity will directly impact subsidy eligibility, compelling equipment makers to accelerate low-power deposition and etch tools. TSMC (Taiwan, China) and Samsung will hasten GAA transistor ramp, while Intel may leverage its integrated materials advantage for a strategic comeback. Over the next 18 months, material-driven energy efficiency—not just performance—will define the advanced node battleground.