Keysight and WIN Semiconductors Collaborate to Cut Design Risk for High Frequency RF Components - EEJournal

Keysight Technologies and WIN Semiconductors have collaborated to introduce a new GaN MMIC design workflow aimed at reducing design risks for high-frequency RF components. This integrated workflow com... Read original →

The Keysight–WIN Semiconductors (Taiwan, China) alliance marks a paradigm shift in RF IC design by tightly integrating EDA workflows with GaN process technology. Technically, co-simulating 3D layout and multi-domain physics slashes design cycles, compelling foundries to standardize PDKs and forcing packaging/test teams into earlier design phases. From a compliance angle, as GaN RF components face tightening export controls in 5G and satellite applications, only vendors with full verification capabilities will secure supply chain access. Competitors like Qorvo and NXP may accelerate in-house EDA development to reduce reliance on third parties. Within 18 months, fabless firms lacking end-to-end validation platforms will be marginalized in mmWave and LEO satellite markets—making EDA-GaN co-optimization the new moat in hard-tech competition.